Majority and minority carrier traps in monocrystalline CulnSe2
Identifieur interne : 000254 ( Main/Exploration ); précédent : 000253; suivant : 000255Majority and minority carrier traps in monocrystalline CulnSe2
Auteurs : RBID : ISTEX:11664_1993_Article_BF02665026.pdfEnglish descriptors
Abstract
Electron and hole traps in Bridgman-grown monocrystalline CuInSe2 were investigated by carrying out deep level transient spectroscopy measurements on homojunctions, Al-CuInSe2 (p-type), and Au-CuInSe2 (n-type) Schottky junctions. Three hole trap levels and two electron trap levels were observed on these devices. Effects of oxygen and etching on the electron trap level at 182 ±15 meV from the conduction band edge were specifically studied. It was found that the election trap densities in the homojunctions prepared using the CuInSe2 samples treated in NH2NH2 solution, which absorbes oxygen atoms in the samples, were larger than the electron trap densities in the homojunctions prepared using untreated samples. Moreover, the electron trap densities in the homojunctions after prolonged heat treatment in O2 were less than that without prolonged heat treatment. The results thus suggested that oxygen atoms in CuInSe2 can reduce the electron trap density of p-type CuInSe2. The effects of chemical etching on these electron traps were also studied. The excess indium atoms in the CuInSe2 were considered to affect the electron traps.
DOI: 10.1007/BF02665026
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Majority and minority carrier traps in monocrystalline CulnSe2</title><author><name>A. L. Li</name><affiliation wicri:level="1"><mods:affiliation>Electrical Engineering Department, McGill Univeristy, 3480 University Street, H3A 2A7, Montreal, PQ, Canada</mods:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Electrical Engineering Department, McGill Univeristy, 3480 University Street, H3A 2A7, Montreal, PQ</wicri:regionArea><wicri:noRegion>PQ</wicri:noRegion></affiliation></author><author><name>I. Shih</name><affiliation wicri:level="1"><mods:affiliation>Electrical Engineering Department, McGill Univeristy, 3480 University Street, H3A 2A7, Montreal, PQ, Canada</mods:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Electrical Engineering Department, McGill Univeristy, 3480 University Street, H3A 2A7, Montreal, PQ</wicri:regionArea><wicri:noRegion>PQ</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1993_Article_BF02665026.pdf</idno><date when="1993">1993</date><idno type="doi">10.1007/BF02665026</idno><idno type="wicri:Area/Main/Corpus">000120</idno><idno type="wicri:Area/Main/Curation">000120</idno><idno type="wicri:Area/Main/Exploration">000254</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier traps</term><term>CuInSe2 deep level transient spectroscopy</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Electron and hole traps in Bridgman-grown monocrystalline CuInSe2 were investigated by carrying out deep level transient spectroscopy measurements on homojunctions, Al-CuInSe2 (p-type), and Au-CuInSe2 (n-type) Schottky junctions. Three hole trap levels and two electron trap levels were observed on these devices. Effects of oxygen and etching on the electron trap level at 182 ±15 meV from the conduction band edge were specifically studied. It was found that the election trap densities in the homojunctions prepared using the CuInSe2 samples treated in NH2NH2 solution, which absorbes oxygen atoms in the samples, were larger than the electron trap densities in the homojunctions prepared using untreated samples. Moreover, the electron trap densities in the homojunctions after prolonged heat treatment in O2 were less than that without prolonged heat treatment. The results thus suggested that oxygen atoms in CuInSe2 can reduce the electron trap density of p-type CuInSe2. The effects of chemical etching on these electron traps were also studied. The excess indium atoms in the CuInSe2 were considered to affect the electron traps.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="150bd027299419422d4b753837e207a4de0b13ae"><titleInfo lang="eng"><title>Majority and minority carrier traps in monocrystalline CulnSe2</title></titleInfo><name type="personal"><namePart type="given">A. L.</namePart><namePart type="family">Li</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Electrical Engineering Department, McGill Univeristy, 3480 University Street, H3A 2A7, Montreal, PQ, Canada</affiliation></name><name type="personal"><namePart type="given">I.</namePart><namePart type="family">Shih</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Electrical Engineering Department, McGill Univeristy, 3480 University Street, H3A 2A7, Montreal, PQ, Canada</affiliation></name><typeOfResource>text</typeOfResource><genre>Regular Issue Paper</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1992-08-03</dateCreated><dateValid encoding="w3cdtf">2007-06-29</dateValid><copyrightDate encoding="w3cdtf">1993</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Electron and hole traps in Bridgman-grown monocrystalline CuInSe2 were investigated by carrying out deep level transient spectroscopy measurements on homojunctions, Al-CuInSe2 (p-type), and Au-CuInSe2 (n-type) Schottky junctions. Three hole trap levels and two electron trap levels were observed on these devices. Effects of oxygen and etching on the electron trap level at 182 ±15 meV from the conduction band edge were specifically studied. It was found that the election trap densities in the homojunctions prepared using the CuInSe2 samples treated in NH2NH2 solution, which absorbes oxygen atoms in the samples, were larger than the electron trap densities in the homojunctions prepared using untreated samples. Moreover, the electron trap densities in the homojunctions after prolonged heat treatment in O2 were less than that without prolonged heat treatment. The results thus suggested that oxygen atoms in CuInSe2 can reduce the electron trap density of p-type CuInSe2. The effects of chemical etching on these electron traps were also studied. The excess indium atoms in the CuInSe2 were considered to affect the electron traps.</abstract><subject lang="eng"><genre>Key words</genre><topic>Carrier traps</topic><topic>CuInSe2 deep level transient spectroscopy</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1993</partNumber><partNumber>Volume: 22</partNumber><partNumber>Number: 2</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1993-02-01</dateIssued><copyrightDate encoding="w3cdtf">1993</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 16</identifier><recordInfo><recordOrigin>The Mineral,Metal & Materials Society,Inc., 1993</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02665026</identifier><identifier type="matrixNumber">Art7</identifier><identifier type="local">BF02665026</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>195</start><end>199</end></extent></part><recordInfo><recordOrigin>The Mineral,Metal & Materials Society,Inc., 1993</recordOrigin><recordIdentifier>11664_1993_Article_BF02665026.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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